Electromagnetic Analysis Using Transmission Line Variables.
Weiner, Maurice.
Electromagnetic Analysis Using Transmission Line Variables. - 1st ed. - 1 online resource (653 pages)
Intro -- Contents -- Preface -- NOTES ON THIRD EDITION -- 1. INTRODUCTION TO TRANSMISSION LINES AND THEIR APPLICATION TO ELECTROMAGNETIC PHENOMENA -- 1.1 Simple Experimental Example -- 1.2 Examples of Impulse Sources -- 1.3 Model Outline -- 1.4 Application of Model to Small Node Resistance -- 1.5 Transmission Line Theory Background -- 1.6 Initial Conditions of Special Interest -- One Dimensional TLM Analysis. Comparison with Finite Difference Method -- 1.7 TLM Iteration Method -- 1.8 Reverse TLM Iteration -- 1.9 Derivation of Scattering Coefficients For Reverse Iteration -- 1.10 Complete TLM Iteration (Combining Forward and Reverse Iterations) -- 1.11 Finite Difference Method. Comparison with TLM Method -- Two Dimensional TLM Analysis. Comparison With Finite Difference Method -- 1.12 Boundary Conditions at 2D Node -- 1.13 Static Behavior About 2D Node -- 1.14 Non-Static Example: Wave Incident on 2D Node -- 1.15 Integral Rotational Properties of Field About the Node -- 1.16 2D TLM Iteration Method for Nine Cell Core Matrix -- 1.17 2D Finite Difference Method. Comparison with TLM Method -- 1.18 Final comments: Inclusion of Time Varying Signals and Phase Coherence -- Appendices -- App. 1A.1 Effect of Additional Paths on Weighing Process -- App. 1A.2 Novel Applications of TLM Method: Description of Neurological Activity Using the TLM Method -- REFERENCES -- 2. NOTATION AND MAPPING OF PHYSICAL PROPERTIES -- 2.1 1D Cell Notation and Mapping of Conductivity and Field -- 2.2 Neighboring 1D Cells with Unequal Impedance -- 2.3 2D Cell Notation. Mapping of Conductivity and Field -- 2.4 Simultaneous Conductivity Contributions -- 2.5 3D Cell Notation. Mapping of Conductivity and Field -- Other Node Controlled Properties -- 2.6 Node Control of 2D Scattering Coefficients Due to Finite Node Resistance -- 2.7 Signal Gain. 2.8 Signal Generation. Use of Node Coupling -- 2.9 Mode Conversion -- Example of Mapping: Node Resistance in Photoconductive Semiconductor -- 2.10 Semiconductor Switch Geometry (2D) and Model -- 2.11 Node Resistance Profile in Semiconductor -- 3. SCATTERING EQUATIONS -- 3.1 1D Scattering Equations -- 3.2 2D Scattering Equations -- 3.3 Effect of Symmetry on Scattering Coefficients -- 3.4 3D Scattering Equations: Coplanar Scattering -- General Scattering, Including Scattering Normal to the Propagation Plane -- 3.5 Simple 3D Equivalent TLM Circuit -- 3.6 Quasi-Coupling -- 3.7 Neglect of Quasi-Coupling -- 3.8 Simple Quasi-Coupling Circuit: First Order Approximation -- 3.9 Correction to Quasi-Coupling Circuit: Second Order Approximation -- 3.10 Calculation of Load Impedance with Quasi-Coupling -- 3.11 Small Coupling Approximation of Second Order Quasi-Coupling -- 3.12 General 3D Scattering Process Using Cell Notation -- 3.13 Complete Iterative Equations -- 3.14 Contribution of Electric and Magnetic Fields to Total Energy -- Plane Wave Behavior -- 3.15 Response of 2D Cell Matrix to Input Plane Wave -- 3.16 Response of 2D Cell Matrix to Input Waves with Arbitrary Amplitudes -- 3.17 Response of 3D Cell Matrix to Input Plane Wave -- 3.18 Final Comments of Uniform Waves Versus Plane Waves -- Appendices -- App.3A.1 Consistency of 3D Circuit with the TLM Static Solutions -- App.3A.2 3D Scattering Coefficients, Without Quasi-Coupling In Terms of Circuit Parameters -- App.3A.3 3D Scattering Coefficients with Both Coplanar and Aplanar Contributions into Unit Cell Lines -- App.3A.4 3D Scattering Equations: with Both Coplanar and Aplanar Contributions into Unit Cell Lines -- 4. CORRECTIONS FOR PLANE WAVE AND GRID ANISOTROPY EFFECTS -- 4.1 Partition of TLM Waves into Component Waves -- How do we Treat a Sign Disparity in +VA and +VB ?. 4.2 Plane Wave Correlation Models Between Cells (2D). Local and Long Range Models and Their Effect on Scattering -- 4.3 Three Cell Correlation Model -- 4.4 Incorporation of Correlation Coefficients (3-Cell Model) -- 4.5 Description of TLM Wave Packet Using the 3-Cell Model with Correlation Coefficients. Modification Adjacent a Low Density State -- 4.6 Composite Model Incorporating Correlation Coefficients. Application to a Plane Wave Packet Including Decorrelation Examples -- Distinction Between Correlation and Decorrelation Processes -- Useful Relations for � Values Close to Unity -- Underlying Physics of Decorrelation Coefficients and Their Effect on the Properties of Coherent Plane Wave Fronts -- 4.7 Changes to 2D Scattering Coefficients for Partitioned Waves -- Corrections to Plane Wave Correlations/Decorrelations -- 4.8 Wave Correlations with Differing Dielectric Interface -- 4.9 Wave Correlations with a Conductor/Dielectric Interface -- 4.10 Use of Correlation Coefficients to Treat Boundaries -- 4.11 Plane Wave Incident on a Half-Infinite Conducting Plane in Terms of Both the 3-Cell and Composite Models -- Sign Disparity and Opposing Plane Wave Decorrelations -- 4.12 Decorrelation Due to Sign Disparity of Plane and Symmetric Waves -- The Need to Decorrelate an Incoming Plane Wave When a Sign Disparity Results -- Various Techniques and Approximations for Removing Sign Disparities -- Summary of Approximations I-V For Removing Sign Disparities -- 4.13 Related Scattering Criteria and Necessary Conditions for Removing the Sign Disparities -- 4.14 Decorrelation of Forward and Backward (Opposing) Plane Waves with Same Polarity (Phase) in TLM Lines without Losses -- 4.15 Summary of Correlation/Decorrelation Coefficients. Possible Reduction in the Number of Coefficients. 4.16 Use of the Various Coefficients in Least Action Solutions. Why is the Least Action Method desirable? -- 4.17 Possible Experimental Arrangements for Determination of the Correlation/Decorrelation Coefficients -- 4.18 Flow Diagram of Various Processes -- Treatment of Grid Orientation Effects -- 4.19 Dependence of Wave Energy Dispersal on Grid Orientation for Symmetric and Plane Waves -- 4.20 Use of Principal Grids for Plane Wave Propagation -- 4.21 Transformation Properties Between Grids -- 4.22 Principal Grids and Mini-Plane Wave Fronts Associated with Each Cell. Plane Wave Partitioning -- Co-Existence of Principal Propagation Vectors in all Quadrants. Modification of Principal Vector -- 4.23 Transformation of Fields to the Principal Grid -- 4.24 Incorporation of Symmetric Waves into a Principal Grid -- 4.25 Iteration Method Using Principal Grid Transformations -- 4.26 Final Comments -- Appendices -- App.4A.1 3D Scattering Corrections of Plane Waves (Plane Wave Correlations Using 3-Cell Model) -- App.4A.2 Consistency of Plane Wave Correlations With a Quantum Mechanical Model -- Decorrelation Examples: 1) Photon Transitions between States Due to Presence of Density Gradients, and 2) Wave Obstructions -- App. 4A.3 Linkage of the Composite Correlation Model to the Quantum Mechanics. Decorrelations Due to Residual Symmetric Waves -- Other Quantum Related Decorrelation Processes Apps. (4A.4a-4A.4c) -- App. 4A.4a Decorrelation Effects of Opposing Waves Using QM Notation -- App. 4A.4b Decorrelation Effects Due to Sign Disparities Using QM Notation -- App. 4A.4c Decorrelation due to an Obstruction (Quantum Viewpoint) -- App. 4A.4d Selection of the Number of m States for Simulations -- App.4A.5 Least Action Solution Methods for Removing Sign Disparities -- 5. BOUNDARY CONDITIONS AND DISPERSION -- 5.1 Dielectric-Dielectric Interface. Node Coupling: Nearest Node And Multi-Coupled Node Approximations -- 5.2 Nearest Nodes for 1D Interface -- 5.3 Nearest Nodes at 2D Interface -- 5.4 Truncated Cells and Oblique Interface -- 5.5 Cell Index Notation at a Dielectric Interface Used in Simulations -- 5.6 Simplified Iteration Neglecting the Nearest Node Approximation -- 5.7 Non-Uniform Dielectric. Use of Cluster Cells -- Other Boundary Conditions -- 5.8 Dielectric - Open Circuit Interface -- 5.9 Dielectric - Conductor Interface -- 5.10 Input/Output Conditions -- 5.11 Composite Transmission Line -- 5.12 Determination of Initial Static Field by TLM Method -- Dispersion -- 5.13 TLM Methods for Treating Dispersion -- 5.14 Dispersion Sources -- 5.15 Dispersion Example -- 5.16 Propagation Velocity Dispersion -- 5.17 Node Resistance Dispersion -- 5.18 Anomalous Dispersion -- Incorporation of Dispersion into TLM Formulation -- 5.19 Dispersion Approximations -- 5.20 Outline of Dispersion Calculation Using the TLM Method -- 5.21 One Dimensional Dispersion Iteration -- 5.22 Initial Conditions with Dispersion Present -- 5.23 Stability of Initial Profiles with Dispersion Present -- 5.24 Replacement of Non-Uniform Field with an Effective Uniform Field -- Appendix -- App.5A.1 Specification of Input/Output Node Resistance to Eliminate Multiple Reflections -- REFERENCES -- 6. CELL DISCHARGE PROPERTIES AND INTEGRATION OF TRANSPORT PHENOMENA INTO THE TRANSMISSION LINE MATRIX -- 6.1 Charge Transfer Between Cells -- 6.2 Relationship Between Field and Cell Charge -- 6.3 Dependence of Conductivity on Carrier Properties -- Integration of Carrier Transport Using TLM Notation. Changes in Cell Occupancy and Its Effect on the TLM Iteration -- 6.4 General Continuity Equations -- 6.5 Carrier Generation Due to Light Activation -- 6.6 Carrier Generation Due to Avalanching: Identical Hole and Electron Drift Velocities. 6.7 Avalanching with Differing Hole and Electron Drift Velocities.
9789813225046
Electromagnetic fields-Mathematics.
Electronic books.
QC665.E4 .W456 2018
530.14/1
Electromagnetic Analysis Using Transmission Line Variables. - 1st ed. - 1 online resource (653 pages)
Intro -- Contents -- Preface -- NOTES ON THIRD EDITION -- 1. INTRODUCTION TO TRANSMISSION LINES AND THEIR APPLICATION TO ELECTROMAGNETIC PHENOMENA -- 1.1 Simple Experimental Example -- 1.2 Examples of Impulse Sources -- 1.3 Model Outline -- 1.4 Application of Model to Small Node Resistance -- 1.5 Transmission Line Theory Background -- 1.6 Initial Conditions of Special Interest -- One Dimensional TLM Analysis. Comparison with Finite Difference Method -- 1.7 TLM Iteration Method -- 1.8 Reverse TLM Iteration -- 1.9 Derivation of Scattering Coefficients For Reverse Iteration -- 1.10 Complete TLM Iteration (Combining Forward and Reverse Iterations) -- 1.11 Finite Difference Method. Comparison with TLM Method -- Two Dimensional TLM Analysis. Comparison With Finite Difference Method -- 1.12 Boundary Conditions at 2D Node -- 1.13 Static Behavior About 2D Node -- 1.14 Non-Static Example: Wave Incident on 2D Node -- 1.15 Integral Rotational Properties of Field About the Node -- 1.16 2D TLM Iteration Method for Nine Cell Core Matrix -- 1.17 2D Finite Difference Method. Comparison with TLM Method -- 1.18 Final comments: Inclusion of Time Varying Signals and Phase Coherence -- Appendices -- App. 1A.1 Effect of Additional Paths on Weighing Process -- App. 1A.2 Novel Applications of TLM Method: Description of Neurological Activity Using the TLM Method -- REFERENCES -- 2. NOTATION AND MAPPING OF PHYSICAL PROPERTIES -- 2.1 1D Cell Notation and Mapping of Conductivity and Field -- 2.2 Neighboring 1D Cells with Unequal Impedance -- 2.3 2D Cell Notation. Mapping of Conductivity and Field -- 2.4 Simultaneous Conductivity Contributions -- 2.5 3D Cell Notation. Mapping of Conductivity and Field -- Other Node Controlled Properties -- 2.6 Node Control of 2D Scattering Coefficients Due to Finite Node Resistance -- 2.7 Signal Gain. 2.8 Signal Generation. Use of Node Coupling -- 2.9 Mode Conversion -- Example of Mapping: Node Resistance in Photoconductive Semiconductor -- 2.10 Semiconductor Switch Geometry (2D) and Model -- 2.11 Node Resistance Profile in Semiconductor -- 3. SCATTERING EQUATIONS -- 3.1 1D Scattering Equations -- 3.2 2D Scattering Equations -- 3.3 Effect of Symmetry on Scattering Coefficients -- 3.4 3D Scattering Equations: Coplanar Scattering -- General Scattering, Including Scattering Normal to the Propagation Plane -- 3.5 Simple 3D Equivalent TLM Circuit -- 3.6 Quasi-Coupling -- 3.7 Neglect of Quasi-Coupling -- 3.8 Simple Quasi-Coupling Circuit: First Order Approximation -- 3.9 Correction to Quasi-Coupling Circuit: Second Order Approximation -- 3.10 Calculation of Load Impedance with Quasi-Coupling -- 3.11 Small Coupling Approximation of Second Order Quasi-Coupling -- 3.12 General 3D Scattering Process Using Cell Notation -- 3.13 Complete Iterative Equations -- 3.14 Contribution of Electric and Magnetic Fields to Total Energy -- Plane Wave Behavior -- 3.15 Response of 2D Cell Matrix to Input Plane Wave -- 3.16 Response of 2D Cell Matrix to Input Waves with Arbitrary Amplitudes -- 3.17 Response of 3D Cell Matrix to Input Plane Wave -- 3.18 Final Comments of Uniform Waves Versus Plane Waves -- Appendices -- App.3A.1 Consistency of 3D Circuit with the TLM Static Solutions -- App.3A.2 3D Scattering Coefficients, Without Quasi-Coupling In Terms of Circuit Parameters -- App.3A.3 3D Scattering Coefficients with Both Coplanar and Aplanar Contributions into Unit Cell Lines -- App.3A.4 3D Scattering Equations: with Both Coplanar and Aplanar Contributions into Unit Cell Lines -- 4. CORRECTIONS FOR PLANE WAVE AND GRID ANISOTROPY EFFECTS -- 4.1 Partition of TLM Waves into Component Waves -- How do we Treat a Sign Disparity in +VA and +VB ?. 4.2 Plane Wave Correlation Models Between Cells (2D). Local and Long Range Models and Their Effect on Scattering -- 4.3 Three Cell Correlation Model -- 4.4 Incorporation of Correlation Coefficients (3-Cell Model) -- 4.5 Description of TLM Wave Packet Using the 3-Cell Model with Correlation Coefficients. Modification Adjacent a Low Density State -- 4.6 Composite Model Incorporating Correlation Coefficients. Application to a Plane Wave Packet Including Decorrelation Examples -- Distinction Between Correlation and Decorrelation Processes -- Useful Relations for � Values Close to Unity -- Underlying Physics of Decorrelation Coefficients and Their Effect on the Properties of Coherent Plane Wave Fronts -- 4.7 Changes to 2D Scattering Coefficients for Partitioned Waves -- Corrections to Plane Wave Correlations/Decorrelations -- 4.8 Wave Correlations with Differing Dielectric Interface -- 4.9 Wave Correlations with a Conductor/Dielectric Interface -- 4.10 Use of Correlation Coefficients to Treat Boundaries -- 4.11 Plane Wave Incident on a Half-Infinite Conducting Plane in Terms of Both the 3-Cell and Composite Models -- Sign Disparity and Opposing Plane Wave Decorrelations -- 4.12 Decorrelation Due to Sign Disparity of Plane and Symmetric Waves -- The Need to Decorrelate an Incoming Plane Wave When a Sign Disparity Results -- Various Techniques and Approximations for Removing Sign Disparities -- Summary of Approximations I-V For Removing Sign Disparities -- 4.13 Related Scattering Criteria and Necessary Conditions for Removing the Sign Disparities -- 4.14 Decorrelation of Forward and Backward (Opposing) Plane Waves with Same Polarity (Phase) in TLM Lines without Losses -- 4.15 Summary of Correlation/Decorrelation Coefficients. Possible Reduction in the Number of Coefficients. 4.16 Use of the Various Coefficients in Least Action Solutions. Why is the Least Action Method desirable? -- 4.17 Possible Experimental Arrangements for Determination of the Correlation/Decorrelation Coefficients -- 4.18 Flow Diagram of Various Processes -- Treatment of Grid Orientation Effects -- 4.19 Dependence of Wave Energy Dispersal on Grid Orientation for Symmetric and Plane Waves -- 4.20 Use of Principal Grids for Plane Wave Propagation -- 4.21 Transformation Properties Between Grids -- 4.22 Principal Grids and Mini-Plane Wave Fronts Associated with Each Cell. Plane Wave Partitioning -- Co-Existence of Principal Propagation Vectors in all Quadrants. Modification of Principal Vector -- 4.23 Transformation of Fields to the Principal Grid -- 4.24 Incorporation of Symmetric Waves into a Principal Grid -- 4.25 Iteration Method Using Principal Grid Transformations -- 4.26 Final Comments -- Appendices -- App.4A.1 3D Scattering Corrections of Plane Waves (Plane Wave Correlations Using 3-Cell Model) -- App.4A.2 Consistency of Plane Wave Correlations With a Quantum Mechanical Model -- Decorrelation Examples: 1) Photon Transitions between States Due to Presence of Density Gradients, and 2) Wave Obstructions -- App. 4A.3 Linkage of the Composite Correlation Model to the Quantum Mechanics. Decorrelations Due to Residual Symmetric Waves -- Other Quantum Related Decorrelation Processes Apps. (4A.4a-4A.4c) -- App. 4A.4a Decorrelation Effects of Opposing Waves Using QM Notation -- App. 4A.4b Decorrelation Effects Due to Sign Disparities Using QM Notation -- App. 4A.4c Decorrelation due to an Obstruction (Quantum Viewpoint) -- App. 4A.4d Selection of the Number of m States for Simulations -- App.4A.5 Least Action Solution Methods for Removing Sign Disparities -- 5. BOUNDARY CONDITIONS AND DISPERSION -- 5.1 Dielectric-Dielectric Interface. Node Coupling: Nearest Node And Multi-Coupled Node Approximations -- 5.2 Nearest Nodes for 1D Interface -- 5.3 Nearest Nodes at 2D Interface -- 5.4 Truncated Cells and Oblique Interface -- 5.5 Cell Index Notation at a Dielectric Interface Used in Simulations -- 5.6 Simplified Iteration Neglecting the Nearest Node Approximation -- 5.7 Non-Uniform Dielectric. Use of Cluster Cells -- Other Boundary Conditions -- 5.8 Dielectric - Open Circuit Interface -- 5.9 Dielectric - Conductor Interface -- 5.10 Input/Output Conditions -- 5.11 Composite Transmission Line -- 5.12 Determination of Initial Static Field by TLM Method -- Dispersion -- 5.13 TLM Methods for Treating Dispersion -- 5.14 Dispersion Sources -- 5.15 Dispersion Example -- 5.16 Propagation Velocity Dispersion -- 5.17 Node Resistance Dispersion -- 5.18 Anomalous Dispersion -- Incorporation of Dispersion into TLM Formulation -- 5.19 Dispersion Approximations -- 5.20 Outline of Dispersion Calculation Using the TLM Method -- 5.21 One Dimensional Dispersion Iteration -- 5.22 Initial Conditions with Dispersion Present -- 5.23 Stability of Initial Profiles with Dispersion Present -- 5.24 Replacement of Non-Uniform Field with an Effective Uniform Field -- Appendix -- App.5A.1 Specification of Input/Output Node Resistance to Eliminate Multiple Reflections -- REFERENCES -- 6. CELL DISCHARGE PROPERTIES AND INTEGRATION OF TRANSPORT PHENOMENA INTO THE TRANSMISSION LINE MATRIX -- 6.1 Charge Transfer Between Cells -- 6.2 Relationship Between Field and Cell Charge -- 6.3 Dependence of Conductivity on Carrier Properties -- Integration of Carrier Transport Using TLM Notation. Changes in Cell Occupancy and Its Effect on the TLM Iteration -- 6.4 General Continuity Equations -- 6.5 Carrier Generation Due to Light Activation -- 6.6 Carrier Generation Due to Avalanching: Identical Hole and Electron Drift Velocities. 6.7 Avalanching with Differing Hole and Electron Drift Velocities.
9789813225046
Electromagnetic fields-Mathematics.
Electronic books.
QC665.E4 .W456 2018
530.14/1