Power Electronics Handbook. (Record no. 2991)
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| 001 - CONTROL NUMBER | |
| control field | EBC30757641 |
| 003 - CONTROL NUMBER IDENTIFIER | |
| control field | MiAaPQ |
| 005 - DATE AND TIME OF LATEST TRANSACTION | |
| control field | 20260623095337.0 |
| 006 - FIXED-LENGTH DATA ELEMENTS--ADDITIONAL MATERIAL CHARACTERISTICS | |
| fixed length control field | m o d | |
| 007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION | |
| fixed length control field | cr cnu|||||||| |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
| fixed length control field | 260525s2024 xx o ||||0 eng d |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| International Standard Book Number | 9780323993432 |
| Qualifying information | (electronic bk.) |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| Canceled/invalid ISBN | 9780323992169 |
| 035 ## - SYSTEM CONTROL NUMBER | |
| System control number | (MiAaPQ)EBC30757641 |
| 035 ## - SYSTEM CONTROL NUMBER | |
| System control number | (Au-PeEL)EBL30757641 |
| 035 ## - SYSTEM CONTROL NUMBER | |
| System control number | (OCoLC)1401059781 |
| 040 ## - CATALOGING SOURCE | |
| Original cataloging agency | MiAaPQ |
| Language of cataloging | eng |
| Description conventions | rda |
| -- | pn |
| Transcribing agency | MiAaPQ |
| Modifying agency | MiAaPQ |
| 050 #4 - LIBRARY OF CONGRESS CALL NUMBER | |
| Classification number | TK7881.15 .P694 2024 |
| 082 0# - DEWEY DECIMAL CLASSIFICATION NUMBER | |
| Classification number | 621.31/7 |
| 100 1# - MAIN ENTRY--PERSONAL NAME | |
| Personal name | Rashid, Muhammad H. |
| 245 10 - TITLE STATEMENT | |
| Title | Power Electronics Handbook. |
| 250 ## - EDITION STATEMENT | |
| Edition statement | 5th ed. |
| 264 #1 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE | |
| Place of production, publication, distribution, manufacture | Chantilly : |
| Name of producer, publisher, distributor, manufacturer | Elsevier Science & Technology, |
| Date of production, publication, distribution, manufacture, or copyright notice | 2024. |
| 264 #4 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE | |
| Date of production, publication, distribution, manufacture, or copyright notice | �2024. |
| 300 ## - PHYSICAL DESCRIPTION | |
| Extent | 1 online resource (1472 pages) |
| 336 ## - CONTENT TYPE | |
| Content type term | text |
| Content type code | txt |
| Source | rdacontent |
| 337 ## - MEDIA TYPE | |
| Media type term | computer |
| Media type code | c |
| Source | rdamedia |
| 338 ## - CARRIER TYPE | |
| Carrier type term | online resource |
| Carrier type code | cr |
| Source | rdacarrier |
| 341 0# - ACCESSIBILITY CONTENT | |
| Textual assistive features | No reading system accessibility options actively disabled |
| Source | onix |
| 341 0# - ACCESSIBILITY CONTENT | |
| Textual assistive features | Table of contents navigation |
| Source | onix |
| 341 0# - ACCESSIBILITY CONTENT | |
| Textual assistive features | Index navigation |
| Source | onix |
| 341 0# - ACCESSIBILITY CONTENT | |
| Textual assistive features | Single logical reading order |
| Source | onix |
| 341 0# - ACCESSIBILITY CONTENT | |
| Textual assistive features | Accessible math content as MathML |
| Source | onix |
| 505 0# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | Intro -- Power Electronics Handbook -- Copyright -- Contents -- Contributors -- Preface for Fifth Edition -- Introduction -- Power electronics backgrounds -- Organization -- Changes in the fifth edition -- Locating your topic -- Audience -- Acknowledgments -- Chapter 1: Introduction -- 1.1. Power Electronics Defineda -- 1.2. Key Characteristics -- 1.2.1. The Efficiency Objective: The Switch -- 1.2.2. The Reliability Objective: Simplicity and Integration -- 1.3. Trends in Power Supplies -- 1.4. Conversion Examples -- 1.4.1. Single-Switch Circuits -- 1.4.2. The Method of Energy Balance -- 1.5. Tools for Analysis and Design -- 1.5.1. The Switch Matrix -- 1.5.2. Implications of Kirchhoff�s Voltage and Current Laws -- 1.5.3. Resolving the Hardware Problem: Semiconductor Devices -- 1.5.4. Resolving the Software Problem: Switching Functions -- 1.5.5. Resolving the Interface Problem: Lossless Filter Design -- 1.6. Sample Applications -- 1.7. Summary -- References -- Section A: Power Electronic Devices -- Chapter 2: Semiconductor Diodes and Transistors -- 2.1. Background in Semiconductor Physics -- 2.2. Semiconductor Diode -- 2.2.1. Static Characteristics -- 2.2.2. Dynamic Characteristics -- 2.2.3. Common Types of Diodes -- 2.2.4. Evaluating the Dynamic Characteristics of Real Diodes -- 2.2.5. Series and Parallel Connection of Power Diodes -- 2.2.6. Typical Application of Diodes -- 2.2.6.1. Rectifiers -- 2.2.6.2. Freewheeling -- 2.2.6.3. Voltage Multiplier -- 2.2.7. PSPICE Model -- 2.3. Power Bipolar Transistor -- 2.3.1. Basic Structure and Operation -- 2.3.2. Static Characteristics -- 2.3.3. Safe Operation Area (SOA) -- 2.3.4. Switching Characteristics -- 2.3.5. Transistor Base Driver Circuits -- 2.3.6. BJT Applications -- 2.3.7. PSPICE Model -- 2.4. Power MOSFET -- 2.4.1. Basic Structure -- 2.4.2. Static Characteristics -- 2.4.2.1. Ohmic Region. |
| 505 8# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | 2.4.2.2. Cutoff Region -- 2.4.2.3. Active Region -- 2.4.3. Switching Characteristics -- 2.4.3.1. Turn-On Analysis -- 2.4.3.2. Turn-Off Analysis -- 2.4.4. Safe Operation Area -- 2.4.5. MOSFET Applications -- 2.4.6. PSPICE Model -- 2.5. Insulated Gate Bipolar Transistor (IGBT) -- 2.5.1. Basic Structure -- 2.5.2. Static Characteristics -- 2.5.3. Switching Characteristics -- 2.5.3.1. Turn-On Analysis -- 2.5.3.2. Turn-Off Analysis -- 2.5.4. IGBT Applications -- 2.5.5. PSPICE Model -- 2.6. Switching Evaluation of a Real MOSFET -- 2.6.1. Results for Sw1 ON and Sw2 OFF and Rpot at the Maximum Resistance -- 2.6.2. Results for Sw1 ON and Sw2 OFF and Rpot at the Maximum Resistance -- 2.6.3. Results for Sw1 and Sw2 ON and Rpot at the Maximum Resistance -- 2.6.4. Results for Sw1 and Sw2 OFF and Rpot at the Maximum Resistance -- 2.7. Heatsink Thermal Design for Power Semiconductors -- 2.7.1. Heatsink Design -- 2.8. Transistor Selection Criteria -- References -- Further Reading -- Chapter 3: Thyristors -- 3.1. Introduction -- 3.2. Basic Structure and Operation -- 3.3. Static Characteristics -- 3.3.1. Current-Voltage Curves for Thyristors -- 3.3.2. Edge and Surface Terminations -- 3.3.3. Packaging -- 3.4. Dynamic Switching Characteristics -- 3.4.1. Cathode Shorts -- 3.4.2. Anode Shorts -- 3.4.3. Amplifying Gate -- 3.4.4. Temperature Dependencies -- 3.5. Thyristor Parameters -- 3.6. Types of Thyristors -- 3.6.1. SCRs and GTOs -- 3.6.1.1. On-State Characteristics -- 3.6.1.2. Off-State Characteristics -- 3.6.1.3. Rate of Rise of Off-State Voltage (dvD/dt) -- 3.6.1.4. Gate Triggering Characteristics -- 3.6.1.5. GTO Switching Phases -- Turn-On -- On-State -- Turn-off -- Off-State Period -- 3.6.1.6. GTO SPICModel -- 3.6.2. MOS-Controlled Thyristors -- 3.6.2.1. Equivalent Circuit and Switching Characteristics -- 3.6.2.2. Turn-On and Turn-Off. |
| 505 8# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | 3.6.2.3. Comparison of MCT and Other Power Devices -- 3.6.2.4. Protection of MCTs -- Paralleling of MCTs -- Overcurrent Protection -- Snubbers -- Simulation Model of an MCT -- 3.6.3. MOS Turn-Off Thyristor [25] -- 3.6.4. Optically Triggered Thyristors -- 3.6.5. Bi-directional Controlled Thyristors -- 3.7. Gate Drive Requirements -- 3.7.1. Snubber Circuits -- 3.7.2. Gate Circuits -- 3.8. Applications -- 3.8.1. DC-AC Utility Inverters -- 3.8.2. Motor Control -- 3.8.3. VAR Compensators and Static Switching Systems -- 3.8.4. Lighting Control Circuits -- References -- Chapter 4: SiC and GaN Power Semiconductor Devices -- 4.1. Background -- 4.2. Silicon Carbide and Gallium Nitride Materials -- 4.2.1. Silicon Carbide Polytypes -- 4.2.2. Gallium Nitride Crystal Structures -- 4.2.2.1. Silicon Carbide and Gallium Nitride Physical and Electrical Properties -- 4.2.2.2. Critical Electric Field -- 4.2.2.3. Intrinsic Carrier Concentration -- 4.2.2.4. Saturated Drift Velocity -- 4.2.2.5. Thermal Stability -- 4.2.2.6. Coefficient of Thermal Expansion -- 4.2.2.7. Figure of Merit -- FOM for Materials and Technology -- FOM for Devices -- 4.3. SiC Power Devices -- 4.3.1. Introduction -- 4.3.2. SiC Power Diodes -- 4.3.2.1. SiC Schottky Diode -- 4.3.2.2. SiC PiN Diode -- 4.3.2.3. SiC Junction Barrier Schottky Diode -- 4.3.3. SiC MOSFET -- 4.3.4. SiC JFET -- 4.3.5. SiC BJT -- 4.3.6. SiC IGBT -- 4.3.7. SiC Thyristor -- 4.4. GaN Power Devices -- 4.4.1. Lateral GaN Schottky Barrier Diodes -- 4.4.2. Vertical GaN PiN Diodes -- 4.4.3. GaN JFET -- 4.4.3.1. Vertical JFET -- 4.4.3.2. Lateral Channel JFET With Vertical Drift Region -- 4.4.4. GaN MOSFET -- 4.4.4.1. Vertical Trench MOSFET -- 4.4.4.2. Lateral MOSFET -- 4.4.5. GaN HEMT -- 4.4.5.1. GaN HEMT Structure -- 4.4.5.2. GaN HEMT DC Characteristics -- 4.4.5.3. GaN HEMT Design Considerations -- 4.4.5.4. GaN Device Trends. |
| 505 8# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | Appendix: Lightly Doped Drift Region Thickness -- References -- Chapter 5: Power Electronic Modules -- 5.1. Introduction -- 5.2. Discrete Power Devices Versus Power Modules -- 5.3. An Example of a Power Module -- 5.4. Manufacturing Process -- 5.4.1. Semiconductor Chips -- 5.4.2. Die Attach -- 5.4.3. Wire Bonds -- 5.4.4. Direct Bonded Copper (DBC) Substrate -- 5.4.5. Baseplate -- 5.5. Types of Power Electronic Modules -- 5.5.1. A Survey of Power Electronic Module Topologies -- 5.5.2. Power Semiconductor Devices Used in Power Electronic Modules -- 5.5.2.1. Power Diode -- 5.5.2.2. Power MOSFET -- 5.5.2.3. Power IGBT -- 5.5.2.4. Power Thyristor -- 5.5.2.5. Power BJT -- 5.6. Thermal Management of Power Modules -- 5.6.1. The Purpose of Thermal Management -- 5.6.2. Equivalent Thermal Network of Power Module -- 5.6.3. Cooling Solutions for Power Module -- 5.6.3.1. Air Cooling -- 5.6.3.2. Liquid Cooling -- 5.6.3.3. Double-Sided Cooling -- 5.6.3.4. Double-Sided Cooling Using the DBC Structure -- 5.6.3.5. Double-Sided Cooling Using the Press-Pack Structure -- 5.7. Reliability of Power Modules -- 5.7.1. Reliability Tests [17] -- 5.8. Design Guidelines and Considerations -- 5.8.1. Bypass Capacitor Considerations -- 5.8.2. Gate Driver Design Considerations -- 5.8.3. Gate Kelvin Contacts -- 5.8.4. Other Design Considerations -- 5.9. Recent Trends in Power Electronics Modules -- 5.9.1. SiC Devices -- 5.9.2. GaN Devices -- 5.9.3. Advanced Packaging Trends -- 5.9.4. Advanced Thermal Management Options for Power Electronics Modules -- 5.10. Summary -- References -- Section B: Power Electronics Converters -- Chapter 6: Diode Rectifiers -- 6.1. Introduction -- 6.2. Single-Phase Diode Rectifiers -- 6.2.1. Single-Phase Half-Wave Diode Rectifier -- 6.2.2. Single-Phase Full-Wave Diode Rectifier -- 6.2.3. Single-Phase Full-Wave Diode Bridge Rectifier. |
| 505 8# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | 6.3. Performance Parameters -- 6.3.1. Voltage Relationships -- 6.3.2. Current Relationships -- 6.3.3. Power Relationships -- 6.3.4. Ripple Factor -- 6.3.5. Rectification Ratio -- 6.3.6. Transformer Power Factor -- 6.3.7. Fourier Analysis -- 6.3.8. Design Considerations -- 6.4. Three-Phase Diode Rectifiers -- 6.4.1. Three-Phase Half-Wave Diode Rectifier -- 6.4.2. Three-Phase Full-Wave Diode Bridge Rectifier -- 6.5. Six-Phase Diode Rectifiers -- 6.5.1. Six-Phase Half-Wave Diode Rectifier -- 6.5.2. Six-Phase Full-Wave Series Diode Bridge Rectifier -- 6.6. Passive Filters in Diode Rectifier Circuits -- 6.6.1. Inductive Filter Connected to the Rectifier DC-Side -- 6.6.2. Capacitive Filter Connected to the Rectifier DC-Side -- 6.6.3. LC Filter Connected to the Rectifier DC-Side -- 6.7. Diode Rectifier Commutation Overlap -- 6.8. Off-Shore Wind Power Plant Connected to Diode-Based HVDC Link -- 6.8.1. Diode-Based HVDC Link Description -- 6.8.2. System Ratings, Nomenclature, dq Domain, and Per Unit Representation -- 6.8.3. System Simulation -- 6.8.4. Diode Rectifier Unit Components -- 6.8.4.1. AC Filters -- 6.8.4.2. Transformers -- 6.8.4.3. HVDC Diode Bridge Rectifier -- 6.8.4.4. DC Filters -- 6.8.5. HVDC Diode Rectifier Model -- 6.8.6. Diode-Based HVDC Link Operation in Steady State -- 6.8.7. Small-Signal Stability Analysis of Diode-Based HVDC Link -- 6.8.7.1. State-Space Variables and Equations -- 6.8.7.2. Model Validation and Small-Signal Stability Analysis -- 6.9. High-Frequency Diode Rectifiers -- 6.9.1. Forward Converter -- 6.9.2. Diodes Design -- Appendix A. HVDC System Parameters -- Appendix B. DRU AC-Filter Banks -- References -- Chapter 7: Single-Phase Controlled Rectifiers -- 7.1. Introduction -- 7.2. Performance Factors -- 7.2.1. Summary of Section 7.2 -- 7.3. Line-Commutated Single-Phase Controlled Rectifiers. |
| 505 8# - FORMATTED CONTENTS NOTE | |
| Formatted contents note | 7.3.1. Single-Phase Half-Wave Rectifier. |
| 520 ## - SUMMARY, ETC. | |
| Summary, etc. | Power Electronics Handbook, Fifth Edition delivers an expert guide to power electronics and their applications.The book examines the foundations of power electronics, power semiconductor devices, and power converters, before reviewing a constellation of modern applications. |
| 532 8# - ACCESSIBILITY NOTE | |
| Summary of accessibility | Trusted Intermediary contact: t.narup@elsevier.com |
| 532 8# - ACCESSIBILITY NOTE | |
| Summary of accessibility | Publisher contact for further accessibility information: t.narup@elsevier.com |
| 588 ## - SOURCE OF DESCRIPTION NOTE | |
| Source of description note | Description based on publisher supplied metadata and other sources. |
| 590 ## - LOCAL NOTE (RLIN) | |
| Local note | Electronic reproduction. Ann Arbor, Michigan : ProQuest Ebook Central, 2026. Available via World Wide Web. Access may be limited to ProQuest Ebook Central affiliated libraries. |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| Topical term or geographic name entry element | Power electronics. |
| 655 #4 - INDEX TERM--GENRE/FORM | |
| Genre/form data or focus term | Electronic books. |
| 776 08 - ADDITIONAL PHYSICAL FORM ENTRY | |
| Relationship information | Print version: |
| Main entry heading | Rashid, Muhammad H. |
| Title | Power Electronics Handbook |
| Place, publisher, and date of publication | Chantilly : Elsevier Science & Technology,c2024 |
| International Standard Book Number | 9780323992169 |
| 797 2# - LOCAL ADDED ENTRY--CORPORATE NAME (RLIN) | |
| Corporate name or jurisdiction name as entry element | ProQuest (Firm) |
| 856 40 - ELECTRONIC LOCATION AND ACCESS | |
| Uniform Resource Identifier | <a href="https://ebookcentral-proquest-com.mlisicats.remotexs.co/lib/ppks/detail.action?docID=30757641">https://ebookcentral-proquest-com.mlisicats.remotexs.co/lib/ppks/detail.action?docID=30757641</a> |
| Public note | Click to View |
| 942 ## - ADDED ENTRY ELEMENTS (KOHA) | |
| Source of classification or shelving scheme | Library of Congress Classification |
| Koha item type | E-Book |
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