Intro -- Power Electronics Handbook -- Copyright -- Contents -- Contributors -- Preface for Fifth Edition -- Introduction -- Power electronics backgrounds -- Organization -- Changes in the fifth edition -- Locating your topic -- Audience -- Acknowledgments -- Chapter 1: Introduction -- 1.1. Power Electronics Defineda -- 1.2. Key Characteristics -- 1.2.1. The Efficiency Objective: The Switch -- 1.2.2. The Reliability Objective: Simplicity and Integration -- 1.3. Trends in Power Supplies -- 1.4. Conversion Examples -- 1.4.1. Single-Switch Circuits -- 1.4.2. The Method of Energy Balance -- 1.5. Tools for Analysis and Design -- 1.5.1. The Switch Matrix -- 1.5.2. Implications of Kirchhoff�s Voltage and Current Laws -- 1.5.3. Resolving the Hardware Problem: Semiconductor Devices -- 1.5.4. Resolving the Software Problem: Switching Functions -- 1.5.5. Resolving the Interface Problem: Lossless Filter Design -- 1.6. Sample Applications -- 1.7. Summary -- References -- Section A: Power Electronic Devices -- Chapter 2: Semiconductor Diodes and Transistors -- 2.1. Background in Semiconductor Physics -- 2.2. Semiconductor Diode -- 2.2.1. Static Characteristics -- 2.2.2. Dynamic Characteristics -- 2.2.3. Common Types of Diodes -- 2.2.4. Evaluating the Dynamic Characteristics of Real Diodes -- 2.2.5. Series and Parallel Connection of Power Diodes -- 2.2.6. Typical Application of Diodes -- 2.2.6.1. Rectifiers -- 2.2.6.2. Freewheeling -- 2.2.6.3. Voltage Multiplier -- 2.2.7. PSPICE Model -- 2.3. Power Bipolar Transistor -- 2.3.1. Basic Structure and Operation -- 2.3.2. Static Characteristics -- 2.3.3. Safe Operation Area (SOA) -- 2.3.4. Switching Characteristics -- 2.3.5. Transistor Base Driver Circuits -- 2.3.6. BJT Applications -- 2.3.7. PSPICE Model -- 2.4. Power MOSFET -- 2.4.1. Basic Structure -- 2.4.2. Static Characteristics -- 2.4.2.1. Ohmic Region. 2.4.2.2. Cutoff Region -- 2.4.2.3. Active Region -- 2.4.3. Switching Characteristics -- 2.4.3.1. Turn-On Analysis -- 2.4.3.2. Turn-Off Analysis -- 2.4.4. Safe Operation Area -- 2.4.5. MOSFET Applications -- 2.4.6. PSPICE Model -- 2.5. Insulated Gate Bipolar Transistor (IGBT) -- 2.5.1. Basic Structure -- 2.5.2. Static Characteristics -- 2.5.3. Switching Characteristics -- 2.5.3.1. Turn-On Analysis -- 2.5.3.2. Turn-Off Analysis -- 2.5.4. IGBT Applications -- 2.5.5. PSPICE Model -- 2.6. Switching Evaluation of a Real MOSFET -- 2.6.1. Results for Sw1 ON and Sw2 OFF and Rpot at the Maximum Resistance -- 2.6.2. Results for Sw1 ON and Sw2 OFF and Rpot at the Maximum Resistance -- 2.6.3. Results for Sw1 and Sw2 ON and Rpot at the Maximum Resistance -- 2.6.4. Results for Sw1 and Sw2 OFF and Rpot at the Maximum Resistance -- 2.7. Heatsink Thermal Design for Power Semiconductors -- 2.7.1. Heatsink Design -- 2.8. Transistor Selection Criteria -- References -- Further Reading -- Chapter 3: Thyristors -- 3.1. Introduction -- 3.2. Basic Structure and Operation -- 3.3. Static Characteristics -- 3.3.1. Current-Voltage Curves for Thyristors -- 3.3.2. Edge and Surface Terminations -- 3.3.3. Packaging -- 3.4. Dynamic Switching Characteristics -- 3.4.1. Cathode Shorts -- 3.4.2. Anode Shorts -- 3.4.3. Amplifying Gate -- 3.4.4. Temperature Dependencies -- 3.5. Thyristor Parameters -- 3.6. Types of Thyristors -- 3.6.1. SCRs and GTOs -- 3.6.1.1. On-State Characteristics -- 3.6.1.2. Off-State Characteristics -- 3.6.1.3. Rate of Rise of Off-State Voltage (dvD/dt) -- 3.6.1.4. Gate Triggering Characteristics -- 3.6.1.5. GTO Switching Phases -- Turn-On -- On-State -- Turn-off -- Off-State Period -- 3.6.1.6. GTO SPICModel -- 3.6.2. MOS-Controlled Thyristors -- 3.6.2.1. Equivalent Circuit and Switching Characteristics -- 3.6.2.2. Turn-On and Turn-Off. 3.6.2.3. Comparison of MCT and Other Power Devices -- 3.6.2.4. Protection of MCTs -- Paralleling of MCTs -- Overcurrent Protection -- Snubbers -- Simulation Model of an MCT -- 3.6.3. MOS Turn-Off Thyristor [25] -- 3.6.4. Optically Triggered Thyristors -- 3.6.5. Bi-directional Controlled Thyristors -- 3.7. Gate Drive Requirements -- 3.7.1. Snubber Circuits -- 3.7.2. Gate Circuits -- 3.8. Applications -- 3.8.1. DC-AC Utility Inverters -- 3.8.2. Motor Control -- 3.8.3. VAR Compensators and Static Switching Systems -- 3.8.4. Lighting Control Circuits -- References -- Chapter 4: SiC and GaN Power Semiconductor Devices -- 4.1. Background -- 4.2. Silicon Carbide and Gallium Nitride Materials -- 4.2.1. Silicon Carbide Polytypes -- 4.2.2. Gallium Nitride Crystal Structures -- 4.2.2.1. Silicon Carbide and Gallium Nitride Physical and Electrical Properties -- 4.2.2.2. Critical Electric Field -- 4.2.2.3. Intrinsic Carrier Concentration -- 4.2.2.4. Saturated Drift Velocity -- 4.2.2.5. Thermal Stability -- 4.2.2.6. Coefficient of Thermal Expansion -- 4.2.2.7. Figure of Merit -- FOM for Materials and Technology -- FOM for Devices -- 4.3. SiC Power Devices -- 4.3.1. Introduction -- 4.3.2. SiC Power Diodes -- 4.3.2.1. SiC Schottky Diode -- 4.3.2.2. SiC PiN Diode -- 4.3.2.3. SiC Junction Barrier Schottky Diode -- 4.3.3. SiC MOSFET -- 4.3.4. SiC JFET -- 4.3.5. SiC BJT -- 4.3.6. SiC IGBT -- 4.3.7. SiC Thyristor -- 4.4. GaN Power Devices -- 4.4.1. Lateral GaN Schottky Barrier Diodes -- 4.4.2. Vertical GaN PiN Diodes -- 4.4.3. GaN JFET -- 4.4.3.1. Vertical JFET -- 4.4.3.2. Lateral Channel JFET With Vertical Drift Region -- 4.4.4. GaN MOSFET -- 4.4.4.1. Vertical Trench MOSFET -- 4.4.4.2. Lateral MOSFET -- 4.4.5. GaN HEMT -- 4.4.5.1. GaN HEMT Structure -- 4.4.5.2. GaN HEMT DC Characteristics -- 4.4.5.3. GaN HEMT Design Considerations -- 4.4.5.4. GaN Device Trends. Appendix: Lightly Doped Drift Region Thickness -- References -- Chapter 5: Power Electronic Modules -- 5.1. Introduction -- 5.2. Discrete Power Devices Versus Power Modules -- 5.3. An Example of a Power Module -- 5.4. Manufacturing Process -- 5.4.1. Semiconductor Chips -- 5.4.2. Die Attach -- 5.4.3. Wire Bonds -- 5.4.4. Direct Bonded Copper (DBC) Substrate -- 5.4.5. Baseplate -- 5.5. Types of Power Electronic Modules -- 5.5.1. A Survey of Power Electronic Module Topologies -- 5.5.2. Power Semiconductor Devices Used in Power Electronic Modules -- 5.5.2.1. Power Diode -- 5.5.2.2. Power MOSFET -- 5.5.2.3. Power IGBT -- 5.5.2.4. Power Thyristor -- 5.5.2.5. Power BJT -- 5.6. Thermal Management of Power Modules -- 5.6.1. The Purpose of Thermal Management -- 5.6.2. Equivalent Thermal Network of Power Module -- 5.6.3. Cooling Solutions for Power Module -- 5.6.3.1. Air Cooling -- 5.6.3.2. Liquid Cooling -- 5.6.3.3. Double-Sided Cooling -- 5.6.3.4. Double-Sided Cooling Using the DBC Structure -- 5.6.3.5. Double-Sided Cooling Using the Press-Pack Structure -- 5.7. Reliability of Power Modules -- 5.7.1. Reliability Tests [17] -- 5.8. Design Guidelines and Considerations -- 5.8.1. Bypass Capacitor Considerations -- 5.8.2. Gate Driver Design Considerations -- 5.8.3. Gate Kelvin Contacts -- 5.8.4. Other Design Considerations -- 5.9. Recent Trends in Power Electronics Modules -- 5.9.1. SiC Devices -- 5.9.2. GaN Devices -- 5.9.3. Advanced Packaging Trends -- 5.9.4. Advanced Thermal Management Options for Power Electronics Modules -- 5.10. Summary -- References -- Section B: Power Electronics Converters -- Chapter 6: Diode Rectifiers -- 6.1. Introduction -- 6.2. Single-Phase Diode Rectifiers -- 6.2.1. Single-Phase Half-Wave Diode Rectifier -- 6.2.2. Single-Phase Full-Wave Diode Rectifier -- 6.2.3. Single-Phase Full-Wave Diode Bridge Rectifier. 6.3. Performance Parameters -- 6.3.1. Voltage Relationships -- 6.3.2. Current Relationships -- 6.3.3. Power Relationships -- 6.3.4. Ripple Factor -- 6.3.5. Rectification Ratio -- 6.3.6. Transformer Power Factor -- 6.3.7. Fourier Analysis -- 6.3.8. Design Considerations -- 6.4. Three-Phase Diode Rectifiers -- 6.4.1. Three-Phase Half-Wave Diode Rectifier -- 6.4.2. Three-Phase Full-Wave Diode Bridge Rectifier -- 6.5. Six-Phase Diode Rectifiers -- 6.5.1. Six-Phase Half-Wave Diode Rectifier -- 6.5.2. Six-Phase Full-Wave Series Diode Bridge Rectifier -- 6.6. Passive Filters in Diode Rectifier Circuits -- 6.6.1. Inductive Filter Connected to the Rectifier DC-Side -- 6.6.2. Capacitive Filter Connected to the Rectifier DC-Side -- 6.6.3. LC Filter Connected to the Rectifier DC-Side -- 6.7. Diode Rectifier Commutation Overlap -- 6.8. Off-Shore Wind Power Plant Connected to Diode-Based HVDC Link -- 6.8.1. Diode-Based HVDC Link Description -- 6.8.2. System Ratings, Nomenclature, dq Domain, and Per Unit Representation -- 6.8.3. System Simulation -- 6.8.4. Diode Rectifier Unit Components -- 6.8.4.1. AC Filters -- 6.8.4.2. Transformers -- 6.8.4.3. HVDC Diode Bridge Rectifier -- 6.8.4.4. DC Filters -- 6.8.5. HVDC Diode Rectifier Model -- 6.8.6. Diode-Based HVDC Link Operation in Steady State -- 6.8.7. Small-Signal Stability Analysis of Diode-Based HVDC Link -- 6.8.7.1. State-Space Variables and Equations -- 6.8.7.2. Model Validation and Small-Signal Stability Analysis -- 6.9. High-Frequency Diode Rectifiers -- 6.9.1. Forward Converter -- 6.9.2. Diodes Design -- Appendix A. HVDC System Parameters -- Appendix B. DRU AC-Filter Banks -- References -- Chapter 7: Single-Phase Controlled Rectifiers -- 7.1. Introduction -- 7.2. Performance Factors -- 7.2.1. Summary of Section 7.2 -- 7.3. Line-Commutated Single-Phase Controlled Rectifiers. 7.3.1. Single-Phase Half-Wave Rectifier.
Power Electronics Handbook, Fifth Edition delivers an expert guide to power electronics and their applications.The book examines the foundations of power electronics, power semiconductor devices, and power converters, before reviewing a constellation of modern applications.