000			02108nam a22004573i 4500
001			EBC31852440
003			MiAaPQ
005			20250825101923.0
006			m o d |
007			cr cnu||||||||
008			250807s2021 xx o ||||0 eng d
020			_a9781108848053 _q(electronic bk.)
020			_z9781108480024
035			_a(MiAaPQ)EBC31852440
035			_a(Au-PeEL)EBL31852440
035			_a(OCoLC)1372576465
040			_aMiAaPQ _beng _erda _epn _cMiAaPQ _dMiAaPQ
050		4	_aTK7871.99.M44 T387 2022
082	0		_a621.395
100	1		_aTaur, Yuan.
245	1	0	_aFundamentals of Modern VLSI Devices.
250			_a3rd ed.
264		1	_aCambridge : _bCambridge University Press, _c2021.
264		4	_c�2022.
300			_a1 online resource (628 pages)
336			_atext _btxt _2rdacontent
337			_acomputer _bc _2rdamedia
338			_aonline resource _bcr _2rdacarrier
520			_aA thoroughly updated third edition of an classic text, perfect for practical transistor design and in the classroom. It includes a variety of recent developments, reorganized chapters, and additional end-of-chapter homework exercises, making it ideal for senior undergraduate and graduate students taking advanced semiconductor devices courses.
588			_aDescription based on publisher supplied metadata and other sources.
590			_aElectronic reproduction. Ann Arbor, Michigan : ProQuest Ebook Central, 2025. Available via World Wide Web. Access may be limited to ProQuest Ebook Central affiliated libraries.
650		0	_aMetal oxide semiconductors, Complementary.
650		0	_aBipolar transistors.
650		0	_aIntegrated circuits-Very large scale integration.
655		4	_aElectronic books.
700	1		_aNing, Tak H.
776	0	8	_iPrint version: _aTaur, Yuan _tFundamentals of Modern VLSI Devices _dCambridge : Cambridge University Press,c2021 _z9781108480024
797	2		_aProQuest (Firm)
856	4	0	_uhttps://ebookcentral-proquest-com.mlisicats.remotexs.co/lib/ppks/detail.action?docID=31852440&query=9781108848053 _zClick to View
942			_2lcc _cEB
999			_c1968 _d1968